Edgeless transistor

Details Edgeless transistor Edgeless transistor

1975-05-27

1977-10-18

Larkins, William D.

357 4, 357 41, 357 49, 357 52, 357 56, H01L 2712, H01L 2978

Patent

active

040548945

ABSTRACT:
An MOS mesa transistor is comprised of a silicon island on an insulating substrate. The silicon island consists entirely of a source region, a drain region, and an I-shaped channel region which separates the source and drain regions. The island has a coating of an oxide of silicon thereon. A rectangular conductive gate is adjacent to the coating and above the channel region and the transverse extremities of the I-shaped channel region extend bilaterally and transversely from underneath the gate at each end thereof.

REFERENCES:
patent: 3840888 (1974-10-01), Gaensslen et al.
patent: 3890632 (1975-06-01), Ham et al.
patent: 3898684 (1975-08-01), Davidsohn
patent: 4015279 (1977-03-01), Ham

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