Edgeless transistor

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Details

357 4, 357 41, 357 49, 357 52, 357 56, H01L 2712, H01L 2978

Patent

active

040152790

ABSTRACT:
An MOS mesa transistor wherein the sidewalls of the mesa are electrically isolated from a device formed on the principal surface of the mesa, is provided. The mesa is comprised of a source and a drain which do not extend to a sidewall of the mesa. The source and the drain are surrounded by a band of semiconductor material which is a portion of the mesa and which electrically isolates the source and the drain from the sidewalls of the mesa.

REFERENCES:
patent: 3840888 (1974-10-01), Gaensslen et al.
patent: 3890632 (1975-06-01), Ham et al.
patent: 3898684 (1975-08-01), Davidsohn

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