Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown
Reexamination Certificate
2011-04-12
2011-04-12
Pham, Hoai v (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With means to prevent edge breakdown
C257S487000, C257SE29023
Reexamination Certificate
active
07923804
ABSTRACT:
A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.
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Darwish Mohamed N.
Su Shih-Tzung
Zeng Jun
Groover III Robert O.
Maxpower Semiconductor Inc.
Pham Hoai v
Storm LLP
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