Edge termination structure for semiconductor components

Details Edge termination structure for semiconductor components Edge termination structure for semiconductor components

2007-03-08

2010-11-09

Fahmy, Wael M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S510000, C438S405000, C438S424000

Reexamination Certificate

active

07829972

ABSTRACT:
A semiconductor component has a drift path (4) in a semiconductor body (5) of a semiconductor chip (6). The semiconductor component has an edge area (7) and a cell area (8), which is surrounded by the edge area (7). A trench structure (9), which surrounds the semiconductor component (6) in the edge area (7), is arranged in the edge area (7) of the semiconductor component (6). At least the trench walls (10) are covered by an insulation material (11). The trench structure (9) which surrounds the semiconductor component (6) has overlapping trench zones (12) with semiconductor material (13) arranged between them.

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German Office Action for German Patent Application No. 10 2006 011 567.8 (3 pages), Nov. 3,2006.

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