Edge seal with polysilicon in LOCOS process

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156643, 156657, 156662, 427 94, H01L 2176

Patent

active

044354460

ABSTRACT:
Intrinsic polysilicon is used to seal the sidewalls of the active areas formed in a silicon substrate in an integrated circuit with no additional masking required over a standard local oxidation (LOCOS) process. Since polysilicon and silicon are compatible materials, a "bird's beak" free structure is produced with a minimum number of defects during subsequent processing.

REFERENCES:
patent: 4292156 (1981-09-01), Matsumoto et al.
R. D. Isaac, "Fabrication Process for Full Box Isolation Without a Bird's Beak", IBM Tech. Disclosure Bulletin, vol. 22, No. 11 (Apr. 1980), pp. 5148-5151.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Edge seal with polysilicon in LOCOS process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Edge seal with polysilicon in LOCOS process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Edge seal with polysilicon in LOCOS process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-741723

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.