Edge protection process for semiconductor device fabrication

Details Edge protection process for semiconductor device fabrication Edge protection process for semiconductor device fabrication

2007-04-24

2007-04-24

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S700000, C438S709000

Reexamination Certificate

active

10967869

ABSTRACT:
An edge protection process for semiconductor device fabrication includes forming a protective layer on the circumferential edge region of a semiconductor substrate. The semiconductor substrate is placed in a plasma atmosphere and trench structures, such as deep trenches and shallow trench isolation structures are etched in the substrate. The protective layer substantially prevents the etching of the circumferential edge region, such that the formation of black silicon is substantially minimized during the etching process.

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