Edge junction schottky diode

Details Edge junction schottky diode Edge junction schottky diode

1986-06-13

1987-05-12

Carroll, J.

357 56, 357 4, 357 68, 357 14, 357 65, H01L 2948, H01L 2712, H01L 2906, H01L 2980

Patent

active

046654135

ABSTRACT:
A schottky junction diode is provided by a substrate (32) having a mesa stacked thin horizontal semiconductor layer (34, 50) with an exposed edge (36) at a generally vertical side (38) of the mesa, and a schottky metal layer (40) having a generally vertical portion (42) over the semiconductor layer edge and forming a generally vertical schottky junction (44) having an area in 10.sup.-8 to 10.sup.-10 cm.sup.2 range for operation at millimeter and submillimeter wave frequencies.

REFERENCES:
patent: 3878553 (1975-04-01), Sirles et al.
patent: 4075650 (1978-02-01), Calviello
patent: 4201999 (1980-05-01), Howard et al.
patent: 4212022 (1980-07-01), Beneking
patent: 4292643 (1981-09-01), Kellner et al.
patent: 4315275 (1982-02-01), Bert et al.
patent: 4466008 (1984-08-01), Beneking
patent: 4549194 (1985-10-01), Calviello

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