Edge intensive antifuse and method for making the same

Details Edge intensive antifuse and method for making the same Edge intensive antifuse and method for making the same

2007-06-26

2007-06-26

Nguyen, Tuan H. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S758000

Reexamination Certificate

active

10882987

ABSTRACT:
An antifuse including a bottom plate having a plurality of longitudinal members arranged substantially parallel to a first axis, a dielectric layer formed on the bottom plate, and a top plate having a plurality of longitudinal members arranged substantially parallel to a second axis, the top plate formed over the dielectric layer. Multiple edges formed at the interfaces between the top and bottom plates result in regions of localized charge concentration when a programming voltage is applied across the antifuse. As a result, the formation of the antifuse dielectric over the corners of the bottom plates enhance the electric field during programming of the antifuse. Reduced programming voltages can be used in programming the antifuse and the resulting conductive path between the top and bottom plates will likely form along the multiple edges.

REFERENCES:
patent: 5300456 (1994-04-01), Tigelaar et al.
patent: 5786268 (1998-07-01), Gordon et al.
patent: 5807786 (1998-09-01), Chang
patent: 5866938 (1999-02-01), Takagi et al.
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6475899 (2002-11-01), Farrar
patent: 6486065 (2002-11-01), Vyvoda et al.
patent: 6541312 (2003-04-01), Cleeves et al.
patent: 6563188 (2003-05-01), Nagatani
patent: 6627530 (2003-09-01), Li et al.
patent: 6853049 (2005-02-01), Herner
patent: 6888750 (2005-05-01), Walker et al.
patent: 2002/0025650 (2002-02-01), Thakur et al.
patent: 2002/0088998 (2002-07-01), Knall et al.
patent: 2003/0003633 (2003-01-01), Mei et al.
patent: 2003/0081446 (2003-05-01), Fricke et al.
patent: 2004/0084713 (2004-05-01), Hsieh

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