Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Reexamination Certificate
2006-06-06
2006-06-06
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
C257S530000
Reexamination Certificate
active
07057218
ABSTRACT:
An antifuse including a bottom plate having a plurality of longitudinal members arranged substantially parallel to a first axis, a dielectric layer formed on the bottom plate, and a top plate having a plurality of longitudinal members arranged substantially parallel to a second axis, the top plate formed over the dielectric layer. Multiple edges formed at the interfaces between the top and bottom plates result in regions of localized charge concentration when a programming voltage is applied across the antifuse. As a result, the formation of the antifuse dielectric over the corners of the bottom plates enhance the electric field during programming of the antifuse. Reduced programming voltages can be used in programming the antifuse and the resulting conductive path between the top and bottom plates will likely form along the multiple edges.
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Dorsey & Whitney LLP
Micro)n Technology, Inc.
Pham Hoai
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