Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1992-09-10
1994-05-03
McFarlane, Anthony
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
118641, 373139, 117933, C30B 1332
Patent
active
053085949
ABSTRACT:
Wafers of silicon-on-insulator (SOI) produced by the zone melting recrystallization technique are known to exhibit warping and edge defects which prohibit their use in automated silicon wafer processing equipment. These deficiencies arise from excess heat buildup at the periphery of the wafer because the wafer edge acts as a barrier to heat transfer. Dissipation of heat from the edge by varying the heat dissipation efficiency of the environment about the periphery of the wafer allows wafers with substantially fewer defects to be produced.
REFERENCES:
patent: 3158505 (1964-11-01), Sandor
patent: 3539759 (1970-11-01), Spiro et al.
patent: 3627590 (1971-12-01), Mammel
patent: 4113547 (1978-09-01), Katz et al.
patent: 4135027 (1979-01-01), Anthony et al.
patent: 4277320 (1981-07-01), Beguwala et al.
patent: 4280989 (1981-07-01), Seimiya et al.
patent: 4371421 (1983-02-01), Fan et al.
patent: 4435447 (1984-03-01), Ito et al.
patent: 4448632 (1984-05-01), Akasaka
patent: 4479846 (1984-10-01), Smith et al.
patent: 4493977 (1985-01-01), Arai et al.
patent: 4503807 (1985-03-01), Nakayama et al.
patent: 4535227 (1985-08-01), Shimizu
patent: 4990374 (1991-02-01), Keely et al.
patent: 5033407 (1991-07-01), Mizuno et al.
patent: 5160575 (1992-11-01), Chen
Robinson et al., "Large Area Recrystallization of Polysilicon with Tungsten-Halogen Lamps", Jrnl. Crystal Growth, vol. 63 (1983) pp. 484-492.
Geis et al., "Zone-Melting Recrystallization of Si Films with a Moveable-Strip Heater Oven", Jrnl. Electro. Chem. Tech., Dec. 1982.
Pinizzotto R. F., "Microstructural Defects in Lazer Recrystallized Graphite Strip Heater . . . Systems: A Status Report", Jrnl Crys. Growth, vol. 63 (1983) pp. 559-582.
Fan et al., "Graphite-Strip-Heater Zone-Melting Recrystallization of Si Films" Jrnl. Crys. Growth, vol. 63 (1983) pp. 453-483.
Massachusetts Institute of Technology
McFarlane Anthony
LandOfFree
Edge-heat-sink technique for zone melting recrystallization of s does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Edge-heat-sink technique for zone melting recrystallization of s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Edge-heat-sink technique for zone melting recrystallization of s will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2113134