Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-01-16
1992-03-24
James, Andrew J.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
357 4, 505862, 505871, H01L 3922, H01L 2712, H01L 4500, H01L 4902
Patent
active
050992945
ABSTRACT:
An edge defined geometry is used to produce very small area tunnel junctions (30) in a structure with niobium nitride superconducting electrodes (14, 28) and a magnesium oxide tunnel barrier (24). The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250.degree. to 500.degree. C. for improved quality of the electrode.
REFERENCES:
patent: 4768069 (1988-08-01), Talvacchio
patent: 4831421 (1989-05-01), Gallagher et al.
Hunt Brian D.
LeDuc Henry G.
James Andrew J.
Jones Thomas H.
Manning John R.
Meier Stephen D.
The United States of America as represented by the Administrator
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