Edge-emitting type semiconductor laser

Details Edge-emitting type semiconductor laser Edge-emitting type semiconductor laser

2006-10-03

2006-10-03

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

Reexamination Certificate

active

07116691

ABSTRACT:
The interval Λ between each stripe of interference fringe generated in a conventional n-type contact layer is determined by a function (f(λ)=λ(n2−neq2)−1/2/2) wherein λ, n, and neqrepresent luminous wavelength λ of lights radiated from a light emitting part 104, refractive index n of the n-type contact layer, and equivalent refractive index neqof the n-type contact layer in guided wave mode, respectively. The remaining thickness δ of the n-type contact layer 102 at the concave part D which is formed at the back surface of the crystal growth substrate may be about Λ/2. When at least one portion of the n-type contact layer which is formed right beneath the laser cavity remains with about δ in thickness, the n-type contact layer arranged even right beneath the laser cavity can maintain excellent contact to a negative electrode. As a result, effective light confinement enables to adequately suppress ripples in FFP owing to lights leaked into the n-type contact layer, to thereby provide a semiconductor laser which oscillates stable lights.

REFERENCES:
patent: 4779280 (1988-10-01), Sermage et al.
patent: 5862167 (1999-01-01), Sassa et al.
patent: 6282345 (2001-08-01), Schimpe
patent: 10-308560 (1998-11-01), None
“Luxpop Index of refraction values and photonics calculations”, available at http:\\www.luxpop.com , accessed Jan. 18, 2006.
Shigetoshi Ito, et al., “Transverse Modes of Ridge-Geometry Violet Laser Diodes”, Sharp Technical Journal No. 77, Aug. 2000, pp. 53-57.

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