Edge-emitting semiconductor lasers

Details Edge-emitting semiconductor lasers Edge-emitting semiconductor lasers

1997-05-29

1999-03-23

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 98, 257102, 372 45, 372 46, H01L 3300

Patent

active

058863702

ABSTRACT:
The present invention relates to a laser with accurately defined and controlled oxide regions which provide electrical and optical confinement to the laser. Specifically, the oxide regions are formed by a pre-oxidation layer disordering process which defines the regions within which oxidation can occur. The present invention allows for the manufacture of highly compact lasers with reproducible optical and electrical characteristics.

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