Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1997-02-25
1999-03-30
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257 21, 257 81, 257 84, 257 85, 257436, H01L 2715
Patent
active
058892940
ABSTRACT:
An edge emitting LED comprises a semiconductor substrate having a main surface, an active layer formed over the main surface, and the active layer having a light emitting region, an optical absorption region having a bandgap energy smaller than that of the light emitting region, and a composition change region formed between the light emitting region and the optical absorption region, the composition change region having the bandgap energy continuously changes. Accordingly, an edge emitting LED is able to produce a stable, spontaneous emission of a light under a wide range of operating conditions. Furthermore, a method of forming an edge emitting LED, comprising the steps of: providing a semiconductor substrate having a previous formation region of an active layer having a light emitting region and an optical absorption region continued with the light emitting region; forming a mask pattern over the substrate located on both sides of the optical absorption region; and forming the active layer over the formed structure. Accordingly, a method of forming a edge emitting LED is able to form a light emitting region and an optical absorption region, with one-step growth.
REFERENCES:
patent: 5574289 (1996-11-01), Aoki et al.
Patterson, Bruce D., Epler, John E., Graf, Bruno, Lehmann, Hans W., and Sigg, Hans C., "A Superluminescent Diode at 1.3 .mu.m with Very Low Spectral Modulation", Mar. 1994, IEEE Journal of Quantum Electronics, vol. 30, No. 3.
Kashima, Yasumasa, Matoba, Akio, and Takano, Hiroshi, "Linear InGaAsP Edge-Emitting LED's for Single-Mode Fiber Communications", Nov. 1992, Journal of Lightwave Technology, vol. 10, No. 11.
Osowski et al., "Broadband emission from InGaAs-GaAs-ALGaAs LED with integrated absorber by selective-area MOCVD", Electronics Letters, Aug. 17, 1995, UK, vol. 31, No. 17.
Patent Abstracts of Japan, vol. 018, No. 318(E-1562), 16 Jun 3 1994 & JP 06 069538 A (Oki Electric Ind. Co. Ltd.), Mar. 11, 1994 *abstract*, Yasumasa.
Patent Abstracts of Japan, vol. 014, No. 257 (E-0936), 4 Jun. 1990 & JP 02 077174 A (Toshiba Corp), Mar. 16, 1990 *abstract*, Akira.
Kashima Yasumasa
Munakata Tsutomu
OKI Electric Industry Co., Ltd.
Tran Minh-Loan
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