Edge emitting led and method of forming the same

Details Edge emitting led and method of forming the same Edge emitting led and method of forming the same

1998-01-07

2000-01-11

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 29, 438 37, H01L 2120

Patent

active

060135395

ABSTRACT:
An edge emitting LED comprises a semiconductor substrate having a main surface, an active layer formed over the main surface, and the active layer having a light emitting region, an optical absorption region having a bandgap energy smaller than that of the light emitting region, and a composition change region formed between the light emitting region and the optical absorption region, the composition change region having the bandgap energy continuously changes. Accordingly, an edge emitting LED is able to produce a stable, spontaneous emission of a light under a wide range of operating conditions. Furthermore, a method of forming an edge emitting LED, comprising the steps of: providing a semiconductor substrate having a previous formation region of an active layer having a light emitting region and an optical absorption region continued with the light emitting region; forming a mask pattern over the substrate located on both sides of the optical absorption region; and forming the active layer over the formed structure. Accordingly, a method of forming a edge emitting LED is able to form a light emitting region and an optical absorption region, with one-step growth.

REFERENCES:
patent: 5574289 (1996-11-01), Aoki et al.
Osowsi et al., "Broadband emission from InGaAs-GaAs-AlGaAs LED with integrated absorber by selective area MOCVD", Electronics Letters 31 (17) pp. 1498-1499, Aug. 1995.

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