Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-04-18
2006-04-18
Smith, Zandra (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S046014
Reexamination Certificate
active
07031361
ABSTRACT:
An edge emitting laser with circular beam using a low-carrier-mobility diluted nitride semiconductor material for an epitaxy light-emitting layer is disclosed. The low-carrier-mobility material can greatly suppress surface recombination of carriers. The epitaxy structure established on the substrate surface includes, from bottom to top, a bottom cladding layer, a bottom waveguide layer, a light-emitting layer, an upper waveguide layer, an upper cladding layer, and an electrode contact layer. The light-emitting layer is formed from a diluted nitride material. Etching is performed from the epitaxy structure through the light-emitting layer, forming a ridge waveguide that has a large reflective index difference between the light-emitting layer and the dielectric passivation layer.
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Lin et al. “Extremely Small Vertical Far-Field Angle of InGaAs-AlGaAs Quantum-Well Lasers with Specifically Designed Cladding Structure”, IEEE Photonics Technology Lettters, vol. 8, No. 12, pp. 1588-1590.
Jeon et al. IEEE Journal of Selected Topics in Quantum Electronics, vol. 3 No. 6, pp. 1344-1350.
Kovsh Alexey R
Lin Gray
Livshits Daniil Alexandrovich
Wang Jyh-Shyang
Golub Marcia A.
Industrial Technology Research Institute
Smith Zandra
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