Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
1999-06-03
2001-05-22
Bowers, Charles (Department: 2823)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C438S456000, C438S458000, C438S113000, C438S613000, C438S614000
Reexamination Certificate
active
06235612
ABSTRACT:
FIELD OF THE INVENTION
The invention relates to integrated circuit devices, and more particularly to integrated circuits having top and edge bonding pads.
BACKGROUND OF THE INVENTION
With the increasing density of components in integrated circuits, it is becoming more difficult to provide the necessary leads and contacts to the integrated circuit device. The larger number of bond pads requires more leads on the lead frame.
One approach to providing a high density bond pad layout is disclosed in U.S. Pat. No. 5,635,424, in which composite bond pad structure and geometry allows an increase in bond pad density. The bond pad density is increased by laying out certain non-square bond pads which are shaped, sized and oriented such that each bond pad closely conforms to the shape of the contact footprint made therewith by a bond wire or lead frame lead.
Another approach used in interconnecting a stack of integrated circuits is to provide a metal edge contact that is connected to surface areas by connecting conductors. This approach is disclosed in U.S. Pat. No. 5,107,586.
SUMMARY OF THE INVENTION
The invention is to a device and the method of making circuit devices with side wall contacts produced on a semiconductor wafer by forming grooves partially through the wafer surface to provide a plurality of device elements on a common base. After the groves are made in the semiconductor wafer, each device element has a top surface and sides surfaces. A semiconductor device or integrated circuit is then formed in the top and side surfaces by well known techniques, including diffusing and deposition processes, to form a semiconductor device. Contact pads are formed on both the top and sides of the device to provide a greater density of contacts for the semiconductor device. The semiconductor devices are separated along the grooves to provide individual devices.
The invention is also to the individual device in which contact pads are on both the top side of the device and the sides of the device.
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Fong Chao Sien
Hsu Ching Shou
Tseng Cheng Yen
Wang Hang Tai
Bowers Charles
Brady III Wade James
Garner Jacqueline J.
Kebede Brook
Telecky , Jr. Frederick J.
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