Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2008-12-01
2010-10-26
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S392000, C257SE27061
Reexamination Certificate
active
07821035
ABSTRACT:
A second semiconductor layer of a second nitride-based compound semiconductor with a wider bandgap formed on a first semiconductor layer of a first nitride-based compound semiconductor with a smaller bandgap includes an opening, on which a gate insulating layer is formed at a portion exposed through the opening. A first source electrode and a first drain electrode formed across a first gate electrode make an ohmic contact to the second semiconductor layer. A second source electrode and a second drain electrode formed across a second gate electrode that makes a Schottky contact to the second semiconductor layer make an ohmic contact to the second semiconductor layer.
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Kambayashi Hiroshi
Niiyama Yuki
Nomura Takehiko
Yoshida Seikoh
Kuo W. Wendy
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
The Furukawa Electric Co. Ltd.
Tran Minh-Loan T
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