ECR plasma source and ECR plasma device

Details ECR plasma source and ECR plasma device ECR plasma source and ECR plasma device

2003-04-09

2009-02-03

Hassanzadeh, Parviz (Department: 1792)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

C156S345360, C156S345420, C156S345460, C118S7230MW

Reexamination Certificate

active

07485204

ABSTRACT:
An ECR plasma source of the invention is constructed of: a plasma generating chamber (10) having a generally rectangular section in a plane normal to a plasma flow; magnetic coils (20, 21) wound in generally rectangular shapes in a plane normal to the plasma flow; and a direct introduction type or branching and binding introduction type waveguide (30) or microwave cavity resonator. Microwaves are transmitted into the plasma generating chamber (10) from a plurality of openings (34) which are formed in such side faces in the waveguide (30) or the microwave cavity resonator as correspond to in-phase microwave portions. Moreover, an ECR plasma device comprises the aforementioned ECR plasma source and a sample moving mechanism for moving a large-sized sample.

REFERENCES:
patent: 4893584 (1990-01-01), Doehler et al.
patent: 5306379 (1994-04-01), Kamide
patent: 5328515 (1994-07-01), Chouan et al.
patent: 5389154 (1995-02-01), Hiroshi et al.
patent: 5707452 (1998-01-01), Dandl
patent: 5843236 (1998-12-01), Yoshiki et al.
patent: 5961851 (1999-10-01), Kamarehi et al.
patent: 5975014 (1999-11-01), Dandl
patent: 6169466 (2001-01-01), Goulouev
patent: 6246175 (2001-06-01), Kou et al.
patent: 6463874 (2002-10-01), Dotter et al.
patent: 2001/0011525 (2001-08-01), Ishii
patent: 0 578047 (1994-01-01), None
patent: 0 702 393 (1996-03-01), None
patent: 0 739 155 (1996-10-01), None
patent: 1 032 097 (2000-08-01), None
patent: 59-047728 (1984-03-01), None
patent: 62-152127 (1987-07-01), None
patent: 62-200730 (1987-09-01), None
patent: 62-229841 (1987-10-01), None
patent: 1-134926 (1989-05-01), None
patent: 2-11772 (1990-01-01), None
patent: 3-130369 (1991-06-01), None
patent: 04-358076 (1992-12-01), None
patent: 6-53152 (1994-02-01), None
patent: 2001-223098 (2001-08-01), None
patent: 10-0197113 (1997-03-01), None
Amazawa et al., “Deposition of High Quality Thin Films Using ECR Plasma”, Reports of Precision Engineering Society, vol. 66, No. 4, pp. 511-516, 2000.
Hiroshi Nishimura, et al., “Processing Uniformity Improvement by Magnetic Field Distribution Control in Electron Cyclotron Resonance Plasma Chamber”, The Japan Society of Applied Physics, Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, 1992, pp. 43-45.
Jes Asmussen, Jr. et al., “The Design and Application of Electron Cyclotron Resonance Discharges,”IEEE Transactions on Plasma Science, vol. 25, No. 6, Dec. 1997, pp. 1196-1221.
Korean Office Action mailed Jan. 26, 2007, Korean Patent Application No. 10-2004-7015840, with translation.
Korean Office Action mailed Jan. 26, 2007, Korean Patent Application No. 10-2004-7015840, with translation.
Jes Asmussen, Jr. et al., “The Design and Application of Electron Cyclotron Resonance Discharges,”IEEE Transactions on Plasma Science, vol. 25, No. 6, Dec. 1997, pp. 1196-1221.

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