Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2006-02-14
2006-02-14
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C438S613000
Reexamination Certificate
active
06998290
ABSTRACT:
A method for forming a flip-chip joinable substrate having non-plated-on contact pads. The substrate has an external metal foil layer upon a dielectric layer upon a patterned internal metal layer having an internal contact area. An area of the external metal foil layer above the internal contact area is selected. A microvia cavity extending to the internal contact area is perforated centrally within the selected area and is filled with a mass of conductive paste forming an external contact pad. The external contact pad is used as an etch mask for removing the adjacent external metal foil.
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Adae-Amoakoh Sylvia
Kresge John S.
Markovich Voya R.
Youngs, Jr. Thurston B.
Nguyen Tuan H.
Schmeiser Olsen & Watts
Steinberg William H.
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