Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1987-02-13
1989-02-28
Hudspeth, David
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307448, 307475, 307468, H03K 19094
Patent
active
048088510
ABSTRACT:
A semiconductor device includes a prediffused array of elementary gates which constitute an integrated circuit (designated as a "custom made circuit") realized on gallium arsenide. The elementary gates which constitute the elements of the prediffused array realize OR/NOR functions according to SCFL logic and constitute both internal gates for the "custom made circuit" and external gates compatible with ECL logic to directly connect the circuit thus formed to an external semiconductor device realized according to ECL logic.
REFERENCES:
patent: 4410815 (1983-10-01), Ransom et al.
patent: 4450369 (1984-05-01), Schuermeyer
patent: 4661725 (1987-04-01), Chantepie
Katsu et al, "A GaAs Monolithic Frequency Divider Using Source Coupled FET Logic", IEEE Elect. Device Letters, vol. EDL-3, No. 8, Aug. 1982, pp. 197-199.
Biren Steven R.
Hudspeth David
U.S. Philips Corporation
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