Measuring and testing – Fluid pressure gauge – Diaphragm
Patent
1997-04-01
1998-09-15
Dombroske, George
Measuring and testing
Fluid pressure gauge
Diaphragm
G01L 912
Patent
active
058082050
ABSTRACT:
An elongated pressure sensor includes an inner bar carried within an elongated hollow member. A gap formed between the bar and elongated hollow member changes shape in response to a pressure applied to the elongated hollow member. Capacitive electrodes on the elongated hollow member and bar have a capacitance which changes in response to applied pressure. The sensor is adapted for coupling to a multifunction body.
REFERENCES:
patent: 3405559 (1968-10-01), Moffatt
patent: 3587322 (1971-06-01), Lobdell et al.
patent: 3743552 (1973-07-01), Fa
patent: 3750476 (1973-08-01), Brown
patent: 4064549 (1977-12-01), Cretzler
patent: 4084438 (1978-04-01), Lee et al.
patent: 4088799 (1978-05-01), Kurtin
patent: 4196632 (1980-04-01), Sikorra
patent: 4287501 (1981-09-01), Tominaga et al.
patent: 4301492 (1981-11-01), Paquin et al.
patent: 4414851 (1983-11-01), Maglic
patent: 4487057 (1984-12-01), Lutz
patent: 4507973 (1985-04-01), Barr et al.
patent: 4538466 (1985-09-01), Kerber
patent: 4542436 (1985-09-01), Carusillo
patent: 4753109 (1988-06-01), Zabler
patent: 4772983 (1988-09-01), Kerber et al.
patent: 4800758 (1989-01-01), Knecht et al.
patent: 4967600 (1990-11-01), Keller
patent: 4970898 (1990-11-01), Walish et al.
patent: 4972717 (1990-11-01), Southworth et al.
patent: 4993267 (1991-02-01), Allard et al.
patent: 5014557 (1991-05-01), Lawless
patent: 5155061 (1992-10-01), O'Connor et al.
patent: 5178015 (1993-01-01), Loeppert et al.
patent: 5201228 (1993-04-01), Kojima et al.
patent: 5212989 (1993-05-01), Kodama et al.
patent: 5227068 (1993-07-01), Runyon
patent: 5231880 (1993-08-01), Ward et al.
patent: 5287746 (1994-02-01), Broden
patent: 5326726 (1994-07-01), Tsang et al.
patent: 5332469 (1994-07-01), Mastrangelo
patent: 5349492 (1994-09-01), Kimura et al.
patent: 5353643 (1994-10-01), Glaser
patent: 5381300 (1995-01-01), Thomas et al.
patent: 5437189 (1995-08-01), Brown et al.
patent: 5471884 (1995-12-01), Czarnocki et al.
"Phase Formation Study in .alpha.-Al.sub.2 O.sub.3 Implanted With Niobium Ions", by L. Romana et al., Nuclear Instruments and Methods in Physics Research B46, published by Elsevier Science Publishers B.V. (North-Holland), pp. 94-97 (1990).
"Surface Electrical Properties of Ni-implanted Sapphire", by L. Shipu et al., Processing of Advanced Materials, published by Chapman & Hall, pp. 77-80 (1991).
"Creep of Sensor's Elastic Elements: Metals Versus Non-metals", by K. Bethe et al., Nova Sensor --Silicon Sensors and Microstructures, 1990, pp. 844-849.
"Silicon Sensors and Microstructures," by J. Brysek et al., Nova Sensor,Jun. 1990, pp. 5.4-5.8, 8.21-8.23, 9.9-9.10, 9.13-9.15.
"A Balanced Resonant Pressure Sensor", by E. Stemme et al., Sensors and Actuators, A21-A23, 1990, pp. 336-341.
"Fabrication of an Implantable Capacitive Type Pressure Sensor", by S. Shoji et al., Transducers '87, 1987.
"Silicon-to-Silicon Direct Bonding Method", by M. Shimbo et al., J. Appl. Phys., vol. 60, No. 8, Oct. 15, 1986, pp. 2987-2989.
"Low-Temperature Preparation of Silicon/Silicon Interfaces by the Silicon-to-Silicon Direct Bonding Method", by S. Bengtsson et al., J. Electrochem. Soc., vol. 137, No. 7, Jul. 1990, pp. 2297-2303.
"Interface Charge Control of Directly Bonded Silicon Structures", by S. Bengtsson et al., J. Appl. Phys., vol. 66, No. 3, Aug. 1, 1989, pp. 1231-1239.
"Wafer Bonding for Silicon-on-Insulator Technologies", by J.B. Lasky, Appl. Phys Lett., vol. 48, No. 1, Jan. 1, 1986, pp. 78-80.
"Small Sensitive Pressure Transducer for Use at Low Temperatures", by W. Griffioen et al., Rev. Sci. Instrum., vol. 56, No. 6, Jun. 1985, pp. 1236-1238.
"High-Temperature Healing of Lithographically Introduced Cracks in Sapphire", by J. Rodel et al., J. Am. Ceram. Soc., vol. 73, No. 3, Mar. 1990, pp. 592-601.
"Production of Controlled-Morphology Pore Arrays: Implications and Opportunities", by J. Rodel et al., J. Am. Ceram. Soc., vol. 70, No. 8, Aug. 1987, pp. C-172-C-175.
Amrozowicz Paul D.
Dombroske George
Rosemount Inc.
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