EBIC response enhancement in type III-VI semiconductor...

Details EBIC response enhancement in type III-VI semiconductor... EBIC response enhancement in type III-VI semiconductor...

2007-02-20

2007-02-20

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S509000, C438S796000, C257SE21497

Reexamination Certificate

active

10927276

ABSTRACT:
A method of processing a type III–VI semiconductor material on a silicon substrate to improve minority carrier diffusion length and EBIC response is provided. The semiconductor material is heated to a temperature in the range of 300° C.–600° C. for a period in the range of 20 seconds to 60 minutes in an atmosphere having a composition of 0–10% of hydrogen in nitrogen.

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patent: 5674555 (1997-10-01), Birkmire et al.
patent: 2002/0113250 (2002-08-01), Chaiken et al.
patent: 318315 (1989-05-01), None
patent: WO 99/39385 (1999-08-01), None

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