Easily manufacturable thin film transistor structures

Details Easily manufacturable thin film transistor structures Easily manufacturable thin film transistor structures

1988-01-04

1989-12-19

Carroll, J.

357 04, 357 02, H01L 4500, H01L 2712, H01L 2978

Patent

active

048886327

ABSTRACT:
An improved structure and method for fabricating amorphous silicon thin film devices, particularly transistors, is described. In additiion to their usual role as gate insulator and optional capping layer, the insulator films are chosen to maximize the transmission of photolithographic active light through the structure. These layers are positioned to either side of the amorphous silicon layer which is a light absorbing layer to act as anti-reflective elements. The insulator layers are chosen to have a refractive index different than the substrate and a thickness dimension chosen so the wave components of said lithographically active light reflected at the interfaces of the completed structure interfere destructively.

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