E.sup.2 PROM having bulk storage

Details E.sup.2 PROM having bulk storage E.sup.2 PROM having bulk storage

1982-09-30

1985-07-02

Hecker, Stuart N.

Static information storage and retrieval

Floating gate

Particular biasing

365184, 365189, 357 235, G11C 700, G11C 1140

Patent

active

045272581

ABSTRACT:
An electrically erasable programmable read only memory employs a single unsteered on-chip high voltage generator that applies high voltage simultaneously to all cells on the chip.

REFERENCES:
patent: 4302766 (1981-11-01), Guterman et al.
patent: 4331968 (1982-05-01), Gosney, Jr. et al.
patent: 4460979 (1984-07-01), Brahmbhatt
Drori et al, "A Single 5v supply Nonvolatile Static RAM", IEEE ISSCC, Feb. 19, 1981, pp. 148-149.
Muller et al, "An 8192-Bit Electrically Alterable ROM Employing a One Transistor Cell with Floating Gate", IEEE Journal of Solid State Circuits, vol. SC-12, No. 5, Oct. 1977, pp. 507-514.

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