E.sup.2 prom cell including isolated control diffusion

Details E.sup.2 prom cell including isolated control diffusion E.sup.2 prom cell including isolated control diffusion

1988-02-05

1989-07-04

Larkins, William D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 45, 365185, G11C 1140, H01L 2978, H01L 2704

Patent

active

048455385

ABSTRACT:
An improved E.sup.2 PROM cell including an isolated control diffusion region strongly capacitively coupled to the floating gate. This control region is coupled to the drain during programming and efficiently couples the programming voltage to the floating gate to induce tunnelling. Only three control signals are required to read, program, or erase the cell.

REFERENCES:
patent: 4402064 (1983-08-01), Arakawa
patent: 4442447 (1984-04-01), Ipri et al.
patent: 4477883 (1984-10-01), Wada
patent: 4513397 (1985-04-01), Ipri et al.
patent: 4580247 (1986-04-01), Adam
patent: 4628487 (1986-12-01), Smayling
patent: 4663740 (1987-05-01), Ebel

Affiliated with

Also associated with

Rating

E.sup.2 prom cell including isolated control diffusion does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with E.sup.2 prom cell including isolated control diffusion, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and E.sup.2 prom cell including isolated control diffusion will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-856328