E.sup.2 prom cell including isolated control diffusion

Static information storage and retrieval – Magnetic bubbles – Guide structure

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357 41, 357 45, 365185, G11C 1140, H01L 2978, H01L 2704

Patent

active

048455385

ABSTRACT:
An improved E.sup.2 PROM cell including an isolated control diffusion region strongly capacitively coupled to the floating gate. This control region is coupled to the drain during programming and efficiently couples the programming voltage to the floating gate to induce tunnelling. Only three control signals are required to read, program, or erase the cell.

REFERENCES:
patent: 4402064 (1983-08-01), Arakawa
patent: 4442447 (1984-04-01), Ipri et al.
patent: 4477883 (1984-10-01), Wada
patent: 4513397 (1985-04-01), Ipri et al.
patent: 4580247 (1986-04-01), Adam
patent: 4628487 (1986-12-01), Smayling
patent: 4663740 (1987-05-01), Ebel

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