E.sup.2 PROM cell including isolated control diffusion

Details E.sup.2 PROM cell including isolated control diffusion E.sup.2 PROM cell including isolated control diffusion

1989-03-22

1991-09-10

Hille, Rolf

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 365185, H01L 2878, H01L 2704, G11C 1140

Patent

active

050478141

ABSTRACT:
An improved EEPROM having a cell including source and drain diffusions, a channel having a source region and a drain region, a floating gate that is disposed only over the drain region of the channel and has a coupling edge disposed adjacent to the drain diffusion to strongly capacitively couple the floating gate to the drain. During programming the floating gate voltage is increased, due to the capacitive coupling of the floating gate to the drain, which in turn inverts the drain region of the channel. The inversion of the drain region increases the coupling of the floating gate to the drain to increase electron tunneling to program the floating gate. Only three control signals are required to read, program, and erase the cell.

REFERENCES:
patent: 4924437 (1990-05-01), Paterson et al.

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