E/P durability by using a sub-range of a full programming range

Details E/P durability by using a sub-range of a full programming range E/P durability by using a sub-range of a full programming range

2011-03-08

2011-03-08

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185240, C365S185110

Reexamination Certificate

active

07903462

ABSTRACT:
A NAND flash memory system is controlled by determining whether to change a value of a voltage threshold. The voltage threshold is associated with an erase operation to a portion of a NAND flash memory chip. In the event it is determined to change the value of the voltage threshold, the value of the voltage threshold is changed and the changed value of the voltage threshold and an identifier associated with the portion of the NAND flash memory chip is stored.

REFERENCES:
patent: 2004/0264264 (2004-12-01), Yaegashi et al.

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