Dynamically switchable reference voltage generator

Details Dynamically switchable reference voltage generator Dynamically switchable reference voltage generator

1993-03-17

1994-07-19

Fears, Terrell W.

Static information storage and retrieval

Powering

365227, 365228, G11C 1300

Patent

active

053315995

ABSTRACT:
An integrated circuit memory which includes a subcircuit for generating a programmable reference voltages on-chip from an external high-voltage supply line. Depending on the mode of operation (test, read, write, etc.), the reference voltage is changed.

REFERENCES:
patent: 4527180 (1985-07-01), Oto
IEEE Journal of Solid-State Circuit, vol. 27, No. 4, Apr. 1992, pp. 574-581, Kuo et al., "A 512-kb Flash EEPROM Embedded in a 32-b Microcontroller".
IEEE Journal of Solid State Circuits, vol. 27, No. 4, Apr. 1992, pp. 583-587, Miyawaki et al., "A New Erasing and Row Decoding Scheme for Low Supply Voltage Operation 16-Mb/64-Mb Flash Memories".
IEEE Journal of Solid-State Circuits, vol. 26, No. 4, Apr. 1991, pp. 484-489, McConnell et al., "An Experimental 4-Mb Flash EEPROM with Sector Erase".

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