Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2009-07-16
2011-10-11
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185190, C365S185220
Reexamination Certificate
active
08036044
ABSTRACT:
Degradation of non-volatile storage elements is reduced by adaptively adjusting erase-verify levels and program-verify levels. The number of erase pulses, or the highest erase pulse amplitude, needed to complete an erase operation is determined. When the number, or amplitude, reaches a limit, the erase-verify level is increased. As the erase-verify level is increased, the number of required erase pulses decreases since the erase operation can be completed more easily. An accelerating increase in the degradation is thus avoided. One or more program-verify levels can also be increased in concert with changes in the erase-verify level. The one or more program-verify levels can increase by the same increment as the erase-verify level to maintain a constant threshold voltage window between the erased state and a programmed state, or by a different increment. Implementations with binary or multi-level storage elements are provided.
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Dong Yingda
Wan Jun
Graham Kretelia
Ho Hoai V
SanDisk Technologies Inc.
Vierra Magen Marcus & DeNiro LLP
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