Dynamic type semiconductor memory device

Static information storage and retrieval – Powering – Data preservation

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Details

365222, 307296A, G11C 700, H03K 301

Patent

active

046100032

ABSTRACT:
A dynamic type semiconductor memory device includes a memory cell having a capacitor for storing an amount of charge corresponding to data and, an n-channel MOS transistor to control charging and discharging to and from the capacitor, and a control unit to permit a read/write operation of the memory cell. The control unit of the memory device includes a drive circuit for generating turn on and turn off voltages, a charge pump circuit connected to the gate of the memory cell, and a switching element connected between the drive circuit and the gate of the MOS transistor.

REFERENCES:
patent: 3806741 (1974-04-01), Smith
patent: 4347448 (1982-08-01), Plachno
patent: 4399519 (1983-08-01), Masuda et al.
Dennard et al., "Design of Ion-Implanted MOSFET's with Very Small Physical Dimensions," IEEE Journal of Solid-State Circuits, vol. SC-19, No. 5, pp. 256-267, Oct. 1974.

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