Dynamic testing of thin-film conductor

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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324 65R, 374 57, G01R 2702, G01N 2714

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active

047392584

ABSTRACT:
The reliability and life cycle of a thin-film conductor is predicted accurately and directly by measuring changes in its resistivity during an interval in which its temperature is dynamically increased. A semiconductor wafer containing a number of integrated circuits, each of which contains the thin-film conductor, is placed on a test platform of a semiconductor test station, where probes are positioned to supply a constant current stress to the conductor and to measure the voltage across it. A ramp current is supplied to a resistive heating element on the test platform to effect a linear rise in temperature over a span of time to the thin-film conductor. Changes in the conductor resistivity with respect to temperature provide kinetic data related to electromigration damage in the conductor, and hence to reliability over time.

REFERENCES:
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patent: 4483629 (1984-11-01), Schwartz et al.
patent: 4567432 (1986-01-01), Buol et al.
J. Phys. Chem. Solids (GB), vol. 37, "Activation Energy for Electratransport in Thin Aluminum Films by Resistance Measurements", Hummel et al., 1976, pp. 73-80.

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