Dynamic storage element having static storage element behavior

Details Dynamic storage element having static storage element behavior Dynamic storage element having static storage element behavior

1978-07-07

1980-09-23

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 23, 357 24, 357 54, 357 91, 307238, 365149, H01L 2702, H01L 2978, H01L 2934, H03K 500

Patent

active

042246350

ABSTRACT:
A storage element comprises a storage capacitor which has a storage electrode, arranged insulated over a doped semiconductor layer, connected to a constant voltage, and a selection element which manifest a gate connected to a word line, arranged in an insulated manner above the semiconductor layer. A source zone connected to a bit line is oppositely doped and arranged at the surface of the semiconductor layer. The selection element selectively connects the source zone to a surface storage region of the semiconductor layer which is disposed beneath the storage electrode. Between the storage electrode and the semiconductor layer an insulated electrode is provided and the semiconductor layer is additionally p-doped and n-doped in a zone beneath a portion, adjacent the selection element, of the electrode and an overflow electrode and an oppositely doped drain zone are provided on the side of the electrode opposite the selection element.

REFERENCES:
Tasch et al., "The Charge-Coupled Ram Cell Concept" IEEE J. Solid-State Circuits, vol. SC-11 (2/76) pp. 58-63.
Spampinato et al., "Single Electrode One-Device Cell" IBM Technical Disclosure Bulletin vol. 15, (11/72) pp. 2019-2020.

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