Dynamic storage element

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307304, 365182, 357 22, 357 23, 357 24, H01L 2704

Patent

active

042426030

ABSTRACT:
A dynamic storage element has an electrically insulating layer carried on a substrate of semiconductor material. A conductor path, provided with a terminal, is arranged on the electrically insulating layer, and first and second zones, doped oppositely to the substrate, are provided on the surface of the substrate. The zones are spaced from one another. In that region of the substrate between the zones the substrate is more highly doped with dopants of the same type as those contained in the substrate and the conductor path extends above the highly doped region.

REFERENCES:
patent: 3865651 (1975-02-01), Arita
patent: 3914855 (1975-10-01), Cheney et al.
patent: 3986180 (1976-10-01), Cade
patent: 4003036 (1977-01-01), Jenne
patent: 4126899 (1978-11-01), Lohstroh et al.
patent: 4126900 (1978-11-01), Koomen et al.
Stein et al., IEEE J. of Solid State Circuits, vol. Sc-8, No. 5, Oct. 1973, pp. 319-323.
Lewis et al., IBM Tech. Discl. Bulletin, vol. 15, No. 9, Feb. 1973, p. 2822.

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