Dynamic semiconductor wafer processing using homogeneous mixed a

Details Dynamic semiconductor wafer processing using homogeneous mixed a Dynamic semiconductor wafer processing using homogeneous mixed a

1991-03-06

1993-08-03

Chaudhuri, Olik

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 3, 134 31, 156639, 156646, B08B 308

Patent

active

052325113

ABSTRACT:
Disclosed are methods and apparatuses for combined etching and cleaning of semiconductor wafers and the like using a combined etchant and cleaning agent, particularly hydrofluoric acid (HF) and hydrochloric acid in water mixtures. Homogeneous vapor mixtures are generated from homogeneous liquid phase mixtures which are preferably recirculated, mixed and agitated. The liquid phase is advantageously circulated through a chemical chamber within the processing bowl. Exposure of wafers to vapors from the chemical chamber can be controlled by a vapor control valve which is advantageously the bottom of the processing chamber. The wafer is rotated or otherwise moved within the processing chamber to provide uniform dispersion of the homogeneous reactant vapors across the wafer surface and to facilitate vapor circulation to the processed surface. A radiative volatilization processor can be utilized to volatilize reaction by-products which form under some conditions. The processes provide efficient uniform etching and cleaning to provide low particle count performance.

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Beyer et al., "Etching of SiO.sub.2 in Gaseous HF/H.sub.2 O", IBM Tech. Disc. Bull., vol. 19, No. 7, Dec. 1976, p. 2513.
IBM Technical Disclosure Bulletin, vol. 19, No. 7, p. 2574, Dec. 1976, Title: Process for reducing gold or copper wafer contamination during oxide removal. By M. Briska, et al.
IBM Technical Disclosure Bulletin, vol. 14, No. 10, dated Mar. 1972. Title: Wafer Cleaner System. By W. Moreau et al.

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