Dynamic replacement of defective memory words

Excavating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

364200, 365200, 371 11, 371 38, G11C 1140

Patent

active

044751940

ABSTRACT:
A single error correcting memory is constructed from partially good components on the design assumption that the components are all-good. Those small number of logical lines containing double-bit errors are replaced when detected with good lines selected from a replacement area of the memory. The replacement area is provided by a flexibly dynamically deallocated portion of the main memory so that it can be selected from any section of the original memory by inserting the appropriate page address in the replacement-page register. With such a memory architecture until the first double-bit error is detected (either in testing or actual use) all pages may be used for normal data storage. When such an error is detected some temporarily unused page in the memory is deal-located, that is rendered unavailable for normal storage, and dedicated to providing substitute lines. The same procedure is followed for subsequent faults. If the replacement area itself becomes defective, a different page may be chosen to provide substitute lines simply by providing a different address in the replacement page register.

REFERENCES:
patent: 4010450 (1977-03-01), Porter et al.
patent: 4150428 (1979-04-01), Inrig et al.
patent: 4310901 (1982-01-01), Harding et al.
patent: 4376300 (1983-03-01), Tsang

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dynamic replacement of defective memory words does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dynamic replacement of defective memory words, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic replacement of defective memory words will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-529476

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.