Dynamic random access memory using MOS FETs and method for manuf

Details Dynamic random access memory using MOS FETs and method for manuf Dynamic random access memory using MOS FETs and method for manuf

1977-02-02

1978-12-26

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 23, 357 51, 357 59, 307238, 365182, 365185, H01L 2702

Patent

active

041319060

ABSTRACT:
A dynamic Random Access Memory consisting of pairs of adjacent one transistor/one capacitor memory cells. The gate electrodes of the MOS FETs in each pair of adjacent memory cells are coupled and further connected to an address line at only a single contact hole. There is also disclosed a method for manufacturing the dynamic Random Access Memory with a high integration density. The gap between one electrode of the capacitor and the MOS FET is minimized by converting the end portion of the capacitor electrode to a thin insulating film.

REFERENCES:
patent: 3771147 (1973-11-01), Boll et al.
patent: 3811076 (1974-05-01), Smith
patent: 4003034 (1977-01-01), Au
patent: 4012757 (1977-03-01), Koo
patent: 4041519 (1977-08-01), Melen

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