Dynamic random access memory having separated V.sub.DD pads for

Static information storage and retrieval – Format or disposition of elements

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365201, 365230, 371 21, G11C 1300

Patent

active

045272549

ABSTRACT:
A random access memory, a method of manufacturing a random access memory, and a method of testing a random access memory in which separate operating voltage terminal pads are provided for the memory cell arrays and peripheral circuits of the memory. By providing separate operating voltage terminal pads, different operating voltages can be applied to the array of cells and the peripheral circuits during a burn-in procedure. In this manner, the burn-in procedure is greatly accelerated without danger of damage to the peripheral circuits due to exceeding the sustaining voltages of the transistor devices of the peripheral circuits during burn-in.

REFERENCES:
patent: 3702466 (1972-11-01), Nakagiri et al.
patent: 4371963 (1983-02-01), Edwards, Jr. et al.
patent: 4464754 (1984-08-01), Stewart et al.

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