Dynamic random access memory having an internal circuit using a

Details Dynamic random access memory having an internal circuit using a Dynamic random access memory having an internal circuit using a

1996-10-21

1998-06-30

Nguyen, Viet Q.

Static information storage and retrieval

Powering

365204, 36518525, G11C 700

Patent

active

057744050

ABSTRACT:
A second charge pump circuit generates a boosted potential at a second level required by a word driver. A first charge pump circuit generates a boosted potential at a first level required by a BLI driver. It is therefore not necessary to generate a boosted potential larger than necessary to BLI driver. As a result, unnecessary current consumption may be restrained and the circuit may be prevented from breaking down, resulting in improved reliability.

REFERENCES:
patent: 5426333 (1995-06-01), Maeda
patent: 5499209 (1996-03-01), Oowaki et al.
patent: 5587958 (1996-12-01), Kaneko et al.
patent: 5642313 (1997-06-01), Ferris

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