Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1994-08-29
1996-11-19
Swann, Tod R.
Static information storage and retrieval
Magnetic bubbles
Guide structure
395432, 365 49, 36523003, G06F 1200
Patent
active
055772234
ABSTRACT:
A dynamic RAM having a TAG address holding circuit in a TAG block in correspondence with one of a plurality of sub-arrays to hold the lower bits of an X (row) address. A block control circuit in the TAG block determines a "Hit" or "Miss" in accordance with the held address and a new X address in response to the sub-address and outputs a TAG determination signal. In response to the TAG judgment signal, a sub-array control circuit transfers a signal for access to the TAG block and a column sense amplifier. The column sense amplifier is utilized as a cache and data latched in the column sense amplifier are read out on a data bus when a "Hit" is determined.
REFERENCES:
patent: 4241425 (1980-12-01), Cenker
patent: 5111386 (1992-05-01), Fujishima
patent: 5214610 (1991-08-01), Houston
patent: 5226147 (1990-08-01), Fujishima
patent: 5251176 (1993-10-01), Komatsu
patent: 5301162 (1994-04-01), Shimizu
patent: 5455796 (1995-10-01), Inui
K. Arimoto et al, "A Circuit Design of Intelligent CDRAM with Automatic Write Back Capability", 1990 Symposium on VLSI Circuits, IEEE 1990.
Chou et al., "A 60-ns 16-Mbit DRAM with a Minimized Sensing Delay Caused by Bit-Line Stray Capacitance," IEEE Journal of Solid-State Circuits, vol. 24, No. 5, Oct. 1989, New York, NY, USA, pp. 1176-1183.
Lu et al., "A 20-ns 128-kbit.times.4 High-Speed DRAM with 330-Mbit/s Data Rate", IEEE Journal of Solid-State Circuits, vol. 23, No. 5, Oct. 1988, New York, NY, USA, pp. 1140-1149.
Niijima et al., "QRAM--Quick Access Memory System", Proceedings of the 1990 IEEE International Conference on Computer Design: VLSI in Computers and Processors, Cambridge, MA, USA, Sep. 17-19, 1990, pp. 417-420.
Shah et al., "A 4-Mbit DRAM with Trench-Transistor Cell", IEEE Journal of Solid-State Circuits, vol. SC-21, No. 5, Oct. 1986, New York, NY, USA, pp. 618-626.
Tanabe Tetsuya
Tanaka Yasuhiro
Tanoi Satoru
Chow Christopher S.
OKI Electric Industry Co., Ltd.
Swann Tod R.
LandOfFree
Dynamic random access memory (DRAM) with cache and tag does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dynamic random access memory (DRAM) with cache and tag, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic random access memory (DRAM) with cache and tag will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-549138