Dynamic random access memory device with the combined open/folde

Details Dynamic random access memory device with the combined open/folde Dynamic random access memory device with the combined open/folde

1996-03-07

2000-12-19

Loke, Steven

Static information storage and retrieval

Format or disposition of elements

365 63, 365149, 36518902, G11C 1300

Patent

active

RE0369934

ABSTRACT:
A dynamic random access memory device includes a semiconductor substrate, a plurality of parallel word lines on the substrate, and a plurality of pairs of bit lines transverse to the word lines on the substrate. An array of one-transistor memory cells are selectively arranged at the cross points as defined between the word lines and the bit lines. The array is subdivided into a plurality of subarray sections. A sense amplifier section is connected to the bit lines. The sense amplifier section includes first and second sense amplifier circuits. Adjacent bit-line pairs of the bit lines include a first bit-line pair and a second bit-line pair, one of which has a folded bit-line arrangement being included in a certain subarray section to be connected to the first sense amplifier circuit, and the other of which has an open bit-line arrangement that extends into the subarray section and another subarray section adjacent thereto, and is connected to the second sense amplifier circuit.

REFERENCES:
patent: 4872142 (1989-10-01), Hannai
patent: 5107459 (1992-04-01), Chu et al.
patent: 5243558 (1993-09-01), Saeki
patent: 5276641 (1994-01-01), Sprogis et al.
Spring National Convention Record, IEICE, vol. 5, p. 256, Mar. 1991, T. Saeki, et al.,"A Study of Close Packed Folded Bit-Line Cell Array (CPF) and Three Phase Folded Bit-Line Array/Circuit (TPF) For DRAM's".

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