Dynamic random access memory device having a plurality of one-tr

Details Dynamic random access memory device having a plurality of one-tr Dynamic random access memory device having a plurality of one-tr

1986-03-28

1988-04-12

Clawson, Jr., Joseph E.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 55, 357 56, 357 59, 365149, H01L 2978

Patent

active

047378298

ABSTRACT:
A dynamic memory device having a plurality of one-transistor type memory cells is disclosed.
The memory device has a plurality of pillar-like semiconductor protrusions. The transfer gate transistor of a memory cell is formed along the upper portion of the pillar-like semiconductor protrusion such that its channel region is positioned at a side surface of the upper portion, and the storage capacitor of the memory cell is formed along the lower portion of the pillar-like semiconductor protrusion.

REFERENCES:
patent: 4353086 (1982-10-01), Jaccodine et al.
patent: 4462040 (1984-07-01), Ho et al.
patent: 4679300 (1987-07-01), Chan et al.

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