Dynamic random access memory device

Static information storage and retrieval – Interconnection arrangements – Transistors or diodes

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Details

365 51, 365 63, 365226, G11C 506

Patent

active

057936641

ABSTRACT:
In a memory in which a memory cell array 200 and a subword drive circuit SWD are alternately arranged in a row direction in addition to an SA array 170 and a cross portion (SWC) alternately arranged, there are arranged an interface circuit 100 between a global I/O line GIOT/B and a local I/O line LIOT/B in a first cross portion SWD1, nMOSs Q2, Q4, and Q5of an SA control circuit in a second cross portion SWC2, and pMOSs Q1 and Q3 of the SA control circuit in a third cross portion SWC3.

REFERENCES:
patent: 5535153 (1996-07-01), Saeki
"A 29ns 64Mb DRAM with Hierarchical Array Architecture" Nakamura et al 1995 IEEE International Solid-State Circuits Conference; pp. 246-247.

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