Dynamic random access memory cell having an improved fin-structu

Details Dynamic random access memory cell having an improved fin-structu Dynamic random access memory cell having an improved fin-structu

1997-03-31

1999-05-11

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361303, 361329, 257303, 257307, 257308, H01G4/30

Patent

active

059034300

ABSTRACT:
The present invention provides a capacitor comprising: a semiconductor substrate; an inter-layer insulator formed over the silicon substrate; at least two interconnections formed within the inter-layer insulator, the two interconnections being distanced at a pitch in a lateral direction; a fin-structured storage electrode comprising a vertically extending column portion and a plurality of fins, each of which laterally and radially extends from the vertically extending column portion, the fins being spaced in a vertical direction and the vertically extending column portion extending through the inter-layer insulator to a surface of the semiconductor substrate and also extending upwardly from a surface of the inter-layer insulator, wherein the vertically extending column portion is smaller in diameter within the inter-layer insulator and larger in diameter over the inter-layer insulator; a capacitive insulation film formed on a surface of the fin-structured storage electrode; and an opposite electrode formed on the capacitive insulation film.

REFERENCES:
patent: 5142639 (1992-08-01), Kohyama et al.
patent: 5160987 (1992-11-01), Pricer et al.
patent: 5206787 (1993-04-01), Fujoka
patent: 5573967 (1996-11-01), Tseng
patent: 5661061 (1997-08-01), Usuami et al.
patent: 5696395 (1997-12-01), Tseng
patent: 5701264 (1997-12-01), Shrivastava et al.
patent: 5835337 (1998-11-01), Watanabe et al.
T. Ema et al., "3-Dimensional Stacked Capacitor Cell For 16M and 64M Drams", pp. 592-595, IEDM 88, IEEE 1988.

Affiliated with

Also associated with

Rating

Dynamic random access memory cell having an improved fin-structu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dynamic random access memory cell having an improved fin-structu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic random access memory cell having an improved fin-structu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-249998