Dynamic random access memory cell and method for fabricating...

Details Dynamic random access memory cell and method for fabricating... Dynamic random access memory cell and method for fabricating...

2005-05-04

2008-12-16

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C257S296000

Reexamination Certificate

active

07465640

ABSTRACT:
A DRAM cell and a method for fabricating the same are provided. The method includes: forming a trench in a substrate; forming a first capacitor dielectric layer on the surface of the trench; forming a conducting layer inside the trench; forming a second capacitor dielectric layer on the surface of the substrate and on the conducting layer, wherein the substrate around the first and second capacitor dielectric layers serves as a bottom electrode; forming a protruding electrode on the substrate, the protruding electrode being on the substrate around the trench and covering a junction between the trench and the substrate; and electrically connecting the protruding electrode and the conducting layer, the conducting layer and the protruding electrode being an upper electrode.

REFERENCES:
patent: 5426324 (1995-06-01), Rajeevakumar

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