Dynamic random access memory and method for accessing same

Details Dynamic random access memory and method for accessing same Dynamic random access memory and method for accessing same

2007-06-11

2009-12-01

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Interconnection arrangements

Transistors or diodes

C365S149000

Reexamination Certificate

active

07626843

ABSTRACT:
An exemplary dynamic random access memory includes a first transistor (210), a second transistor (220) and a comparator (230). The first transistor includes a first gate electrode (211), a first source electrode (213) and a first drain electrode (215). The second transistor includes a second gate electrode (221), a second source electrode (223) and a second drain electrode (225). The first source electrode is connected with the second source electrode. The first drain electrode is an input terminal for inputting a message. The comparator is connected to the second drain electrode, and preconfigured with a reference current. The comparator compares the reference current and a current through the second drain electrode to define a state of the current read from the comparator.

REFERENCES:
patent: 4682328 (1987-07-01), Ramsay et al.
patent: 4961167 (1990-10-01), Kumanoya et al.
patent: 5105387 (1992-04-01), Childers et al.
patent: 5315554 (1994-05-01), Nanba
patent: 5359566 (1994-10-01), Furuyama
patent: 5375093 (1994-12-01), Hriano
patent: 5640350 (1997-06-01), Iga
patent: 5889717 (1999-03-01), Eto
patent: 7123514 (2006-10-01), Watanabe
patent: 7145829 (2006-12-01), Kim
patent: 7184298 (2007-02-01), Fazan et al.
patent: 7388567 (2008-06-01), Lin et al.
patent: 2006/0044023 (2006-03-01), Yun et al.

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