Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Reexamination Certificate
2007-09-14
2011-12-06
Luu, An T (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
C327S534000, C363S059000
Reexamination Certificate
active
08072256
ABSTRACT:
A dynamic random access memory (DRAM) is selectively operable in a sleep mode and another mode. The DRAM has data storage cells that are refreshed in the refresh mode. A boosted voltage is provided for the operation of the DRAM. A boosted voltage provider includes a group of charge pump circuits that are selectively activated by a pump control circuit based on a refresh time for refreshing data in the DRAM cells in the sleep mode.
REFERENCES:
patent: 5315557 (1994-05-01), Kim et al.
patent: 5363333 (1994-11-01), Tsujimoto
patent: 5604707 (1997-02-01), Kuge et al.
patent: 5672996 (1997-09-01), Pyeon
patent: 5867442 (1999-02-01), Kim et al.
patent: 5886932 (1999-03-01), Choi
patent: 5889719 (1999-03-01), Yoo et al.
patent: 6052022 (2000-04-01), Lee
patent: 6157242 (2000-12-01), Fukui
patent: 6320797 (2001-11-01), Liu
patent: 6400210 (2002-06-01), Myono
patent: 6426908 (2002-07-01), Hidaka
patent: 6472926 (2002-10-01), Taito et al.
patent: 6549474 (2003-04-01), Liu
patent: 6791212 (2004-09-01), Pulvirenti et al.
patent: 7230860 (2007-06-01), Jeong
patent: 7292483 (2007-11-01), Sohn et al.
patent: 7427888 (2008-09-01), Zhang et al.
patent: 2002/0009102 (2002-01-01), Hayakawa
patent: 2006/0250177 (2006-11-01), Thorp et al.
patent: 2007/0153611 (2007-07-01), Lee
patent: 2007/0201285 (2007-08-01), Jeong
International Search Report issued on Nov. 20, 2008 by Canadian Searching Authority on PCT Application No. PCT/CA2008/001585.
Nagai et al., “A 65nm Low-Power Embedded DRAM with Extended Data-Retention Sleep Mode”, 2006 IEEE International Solid-State Circuits Conference.
Luu An T
Mosaid Technologies Incorporated
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