Dynamic random access memories with dielectric compositions stab

Details Dynamic random access memories with dielectric compositions stab Dynamic random access memories with dielectric compositions stab

1998-05-28

2000-10-31

Tucker, Philip

Compositions

Light transmission modifying compositions

Inorganic crystalline solid

423598, 501139, 3613215, G02B 520, C01G 2300, C04B 3546, H01G 406

Patent

active

061397806

ABSTRACT:
A charge storage device is resistant to degradation in reducing atmospheres for use in dynamic random access memories. The device consists of a dielectric layer that is sandwiched between two electrodes and grown on a suitable substrate such as silicon or silicon coated with silicon dioxide. The dielectric layer is either (a) a modified composition of Ba.sub.x Sr.sub.1-x TiO.sub.3, 0<x<1 (BST) doped with acceptor type dopants such as Mn, Co, Mg, Cr, Ga and Fe ions as the dielectric layer in the capacitor; the acceptor ions can occupy the titanium sites to prevent the formation of Ti.sup.3+ and inhibit the formation of conductive BST by compensating the charges of the oxygen vacancies, and by trapping the free electrons more freely than Ti.sup.4+, or (b) modified dielectric compositions with alkaline-earth ions with compositions [(Ba.sub.x M.sub.x)O].sub.y TiO.sub.2 (where M can be Ca, Sr or Mg) with the value of y slightly larger than unity.

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