Dynamic RAM memory and vertical charge coupled dynamic storage c

Static information storage and retrieval – Magnetic bubbles – Guide structure

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357 24, 357 45, 365183, H01L 2978, H01L 2710, G11C 1134

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active

044713681

ABSTRACT:
A dynamic RAM memory comprised of a plurality of storage cells, each cell having its elements vertically stacked and using vertical charge coupling for charging and discharging the cell capacitor. The preferred embodiment of the cell comprises a semiconductive substrate having diffused into its upper surface a channel of opposite impurity concentration to that of the substrate for forming the bit line of the memory. An epitaxial layer is grown on the substrate surface to bury the bit line, a channel stop is diffused into the upper surface of the epitaxial layer to circumscribe the active cell area, and a thin insulator is disposed on the surface of the epitaxial layer with a conductive strip deposited thereon which form the word line of the memory. The thickness of the epitaxial layer, the impurity concentration of the buried channel and the epitaxial layer, together with the applied voltages, are selected for charge coupling operations.

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