Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1986-10-17
1988-11-15
James, Andrew J.
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 55, 357 65, 357 68, 365149, H01L 2978
Patent
active
047853379
ABSTRACT:
A one-device shared trench memory cell, in which the polysilicon and dielectric layers within the trench extend above the surface of the trench to form a mandrel structure. A layer of polysilicon is conformably deposited on the mandrel structure. Dopant ions are diffused from the doped polysilicon within the trench to the conformal polysilicon layer, and from the conformal polysilicon layer, and from the conformal polysilicon layer to a portion of the substrate disposed thereunder. The conformal polysilicon is etched in a solvent that preferentially attacks undoped polysilicon, to provide and is a bridge contact that is self-aligned to the polysilicon within the trench and to the diffusion region. A plurality of FETs formed on either side of the trench, by use of a sidewall-defined gate electrode to maximize density. The cell produces a "poly-to-poly" and "poly-to-substrate" storage capacitor combination that maximizes charge storage capability.
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Chadurjian Mark F.
International Business Machines - Corporation
James Andrew J.
Prenty Mark
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